1N5622

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product Spectation

ParameterSymbolValue
Maximum Recurrent Peak Reverse VoltageVRRM800V
Maximum RMS VoltageVRMS560V
Maximum DC blocking VoltageVDC800V
Maximum Reverse Breakdown Voltage I =50µA RVBR900V
Maximum Average Forward Rectified Current 3/8”lead length at Ta=55℃IFAV1A
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated loadIFSM35A
Maximum Forward Voltage at rated Forward Current and 25℃VF1.3V
Non Repetitive Reverse Avalanche EnergyER10
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =165°C [Ta=25°C]IR5μA
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =165°C [Ta=165°C]IR150μA
Maximum Reverse Recovery TimeTRR300ns
Diode CapacitanceCd10pF
Typical Thermal ResistanceRth(ja)55
Storage and Operating Junction TemperatureTSTG, Tj-65to+175

Features

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability

Mechanical Data

Case
SOD-57 sintered glass case
Terminal
Plated axial leads solderable per J-STD-002
Polarity
color band denotes cathode end
Mounting Position
any

Notes

  • [1]Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A
  • [2]Measures at 1.0MHz and applied reverse voltage of 4.0 Volts
  • [3]Thermal resistance from junction to ambient at 0.375″(9.5mm) lead length, P.C.B. mounted