1N6120A
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
Product Spectation
| Parameter | Symbol | Value |
|---|---|---|
| Peak power dissipation with a 10/1000 µs waveform (1) (Fig. 1) | PPPM | 500W |
| Peak pulse current with a 10/1000 µs waveform (1) | IPPM | 9.3A |
| Breakdown Voltage at I =30mA T | VBR | 37.1min |
| Breakdown Voltage at I =30mA T | VBR | 41.0max |
| MaximumReveres LeakageCurrent Voltage | IR | 1μA |
| Maximum Clamping Voltage at IPPM | VC | 53.6V |
| Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5) | PD | 5W |
| Typical Thermal Resistance | Rth(jl) | 20°C/W |
| Typical Thermal Resistance | Rth(ja) | 75°C/W |
| Storage and Operating Junction Temperature | TSTG, Tj | -55to+175 |
| Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load | IFSM | - |
| Breakdown Voltage at I =1mA T | VBR | - |
| Breakdown Voltage at I =1mA T | VBR | - |
| Maximum Forward Voltage at rated Forward Current and 25℃ | VF | - |
Features
- Low power loss
- High surge capability
- Glass passivated chip junction
- High temperature soldering guaranteed
- 260℃/10sec/0.375″lead length at 5 lbs tension
Mechanical Data
- Terminal
- Plated axial leads solderable per J-STD-002
- Polarity
- no marking
- Mounting Position
- any
Notes
- [1]Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2