BYM26E
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
- Category
- Avalanche Rectifier
- Datasheet
- BYM26E
Product Spectation
| Parameter | Symbol | Value |
|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 1000V |
| Maximum RMS Voltage | VRMS | 700V |
| Maximum DC blocking Voltage | VDC | 1000V |
| Reverse avalanche breakdown voltage at IR = 0.1 mA | V(BR)R | 1100min |
| Maximum Average Forward Rectified Current 3/8”lead length at Ta=55℃ | IFAV | 2.3A |
| Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load | IFSM | 45A |
| Maximum Forward Voltage at rated Forward Current and 25℃ | VF | 2.65V |
| Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =165°C [Ta=25°C] | IR | 10μA |
| Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =150°C [Ta=150°C] | IR | 150μA |
| Maximum Reverse Recovery Time | TRR | 75ns |
| Non Repetitive Reverse Avalanche Energy | ER | 10 |
| Diode Capacitance | Cd | 75pF |
| Typical Thermal Resistance | Rth(ja) | 75 |
| Storage and Operating Junction Temperature | TSTG, Tj | -65to+175 |
Features
- Glass passivated
- High maximum operating temperature
- Low leakage current
- Excellent stability
- Guaranteed avalanche energy absorption capability
Mechanical Data
- Case
- SOD-64 sintered glass case
- Terminal
- Plated axial leads solderable per MIL-STD 202E, method 208C
- Polarity
- color band denotes cathode end
- Mounting Position
- any
Notes
- [1]Reverse Recovery Condition I = 0.5A, I = 1.0A, I = 0.25A F R RR
- [2]Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm