BYV26C

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Product Spectation

ParameterSymbolValue
Maximum Recurrent Peak Reverse VoltageVRRM600V
Maximum RMS VoltageVRMS420V
Maximum DC blocking VoltageVDC600V
Reverse avalanche breakdown voltage at IR = 0.1 mAV(BR)R700min
Maximum Average Forward Rectified Current 3/8”lead length at Ta=55℃IFAV1A
Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated loadIFSM30A
Maximum Forward Voltage at rated Forward Current and 25℃VF2.5V
Non-repetitive peak reverse avalanche energyERSM10
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =165°C [Ta=25°C]IR5μA
Maximum DC Reverse Current Ta =25°C at rated DC blocking voltage Ta =165°C [Ta=165°C]IR150μA
Maximum Reverse Recovery TimeTRR30ns
Diode CapacitanceCd45pF
Typical Thermal ResistanceRth(ja)100°C/W
Storage and Operating Junction TemperatureTSTG, Tj-65to+175

Features

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability

Mechanical Data

Case
SOD-57 sintered glass case
Terminal
Plated axial leads solderable per MIL-STD 202E, method 208C
Polarity
color band denotes cathode end
Mounting Position
any

Notes

  • [1]R=400mA; Tj=Tjmax prior to surge; inductive load switched off
  • [2]Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A
  • [3]Measured at 1.0 MHz and applied reverse voltage of 0Vdc
  • [4]Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm