GS1MH-E
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
- Category
- SMD Rectifier
- Datasheet
- GS1MH-E
Product Spectation
| Parameter | Symbol | Value |
|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 1000V |
| Maximum RMS Voltage | VRMS | 700V |
| Maximum DC blocking Voltage | VDC | 1000V |
| Maximum Average Forward Rectified Current 3/8”lead length at Ta =55°C | If(av) | 1A |
| Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load | IFSM | 30A |
| Maximum Forward Voltage at rated Forward Current and 25°C | Vf | 1.1V |
| Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ | Ir | 5μA |
| Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ | Ir | 200μA |
| Maximum Reverse Recovery Time | TRR | 1000～2000 |
| Typical Junction Capacitance | Cj | 15pF |
| Typical Thermal Resistance | Rth(jl) | 30°C/W |
| Typical Thermal Resistance | Rth(ja) | 75°C/W |
| Operating junction and storage temperature range | Tj, TSTG | -50to+150 |
Features
- Ideal for surface mount pick and place application
- Low profile package
- Built-in strain relief
- High surge capability
- High temperature soldering guaranteed
- 260℃/10sec/at terminals
- Halogen Free
Mechanical Data
- Terminal
- Solder plated, solderable per MIL-STD 750, method 2026
- Case
- Molded with UL-94 class V-0 recognized Halogen Free Epoxy
- Polarity
- color band denotes cathode
Notes
- [1]Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A, in the test and applications can allowed tolerance range 5%
- [2]Measured at 1.0 MHz and applied voltage of 4.0Vdc
- [3]Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area
- [4]Thermal Resistance from Junction to ambient