HB1M-E
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
- Category
- SMD Bridge Rectifier
- Datasheet
- HB1×-E_Liteon
Product Spectation
| Parameter | Symbol | Value |
|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 1000V |
| Maximum RMS Voltage | VRMS | 700V |
| Maximum DC blocking Voltage | VDC | 1000V |
| Maximum Average Forward Rectified Current 3/8”lead length at Ta =55°C | If(av) | 1A |
| Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) | IFSM | 30@8.3ms |
| Peak forward surge current square wave on rated load | IFSM | 60@1ms |
| Peak forward surge current square wave on rated load | IFSM | 25@8.3ms |
| Peak forward surge current square wave on rated load | IFSM | 50@1ms |
| Maximum Forward Voltage at rated Forward Current and 25°C | Vf | 0.95V |
| Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ | Ir | 2μA |
| Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ | Ir | 100μA |
| Rating for fusing (t < 8.3ms) | I2t | 3.9A²·s |
| Typical Junction Capacitance | Cj | 11pF |
| Typical Thermal Resistance | Rth(jl) | 25°C/W |
| Maximum thermal resistance per leg | Rth(jc) | 20°C/W |
| Typical Thermal Resistance | Rth(ja) | 62.5°C/W |
| Storage and Operating Junction Temperature | TSTG, Tj | -55to+150 |
| Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load | IFSM | - |
Features
- Ideal for printed circuit board
- Glass passivated chip
- Reliable low cost construction utilizing molded plastic
- technique
- High surge current capability
- Small size, simple installation
- High temperature soldering guaranteed: 260℃/10 seconds
- Halogen Free
Mechanical Data
- Terminal
- Plated leads solderable per J-STD-002
- Case
- UL-94 Class V-0 recognized Halogen Free Epoxy
- Polarity
- Polarity symbol marked on body
Notes
- [1]Measured at 1.0 MHz and applied voltage of 4.0Vdc